| PART |
Description |
Maker |
| LDM-0980-300M-92 |
CW Output Power: 300 mW Typical 975 nm Emission Wavelength High-effciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| HFM101-S |
Chip High Effciency Rectifiers
|
Formosa MS
|
| SS12-120 |
Low power loss, high effciency
|
Bruckewell Technology L...
|
| MURA210G |
(MURA205G - MURA2100G) 2.0A Surface Mount High Effciency Rectifiers
|
American First Semiconductor
|
| TPCP8005-H |
High-Effciency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
|
| HL6724MG |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
From old datasheet system
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
|
HITACHI[Hitachi Semiconductor]
|
| LD808-5-TO3 |
Output power5.0w(CW) Variety of stripe width Efficient quantum well structure
|
Roithner LaserTechnik GmbH
|
| STK14C88-M |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
Simtek
|
| NX6308GH NX6308GH-AZ |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| NX6411GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| STK11C88-3 STK11C88-3N45 STK11C88-3N45I STK11C88-3 |
Quadruple 2-Input Exclusive-OR Gates 16-PDIP -40 to 85 32K的8非易失性SRAM 3.3伏量子端粒酶的CMOS非易失静态RAM
32K X 8 NVSRAM 3.3 V QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
List of Unclassifed Manufacturers
Simtek
ETC[ETC]
Electronic Theatre Controls, Inc.
|
